Conference Publication Details
Mandatory Fields
Cabrera, W., Dong, H., Brennan, B., O'Connor, E., Carolan, P., Galatage, R., Monaghan, S., Povey, I., Hurley, P.K., Hinkle, C.L., Chabal, Y., Wallace, R.M.
Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Atomic layer deposition of HfO2 on III-V semiconductors - An interfacial chemistry perspective
Optional Fields
ALD HfO2 III-V semiconductors InGaAs InP Deposition Exhibitions Fluidics Hafnium oxides Interfaces (materials) Nanotechnology Semiconducting indium Atomic layer deposition
Volume 2, page 1
Volume 2, page 4
Washington, DC; United States

The atomic layer deposition (ALD) of HfO2 on various III-V semiconductor materials is discussed in detail, with particular emphasis on the interaction between the HfO2 and the residual native oxide present at the interface. This interface is of critical importance in terms of device performance, impacting on the interfacial trap density which can lead to Fermi level pinning. Changes in the interfacial chemistry between ALD HfO2 and GaAs, InGaAs and InP are discussed in terms of changes to the composition of the native oxide upon interaction with the ALD precursors, as well as the potential for migration of substrate materials into the high-k oxide layer.

#0925844; NSF; National Science Foundation; BASF - The Chemical Company,Boeing,K and L Gates,Thermo Scientific,Intellectual Property Insurance Services Corporation (IPISC),ChiNano
ISBN: 978-148220584-8
Grant Details