Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K.

2012

May

Electrochemical Society Transactions

Can metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics?

Published

()

AC signals Capacitance voltage Electrical characteristic Forming gas annealing Interface state density MOS-FET MOSFETs N-channel Oxide charge density Process flows State concentration Gallium Interface states Manufacture Materials science MOS capacitors MOSFET devices Nanosystems

45

3

79

88

In this paper we present the electrical characteristics of Metal/Al ₂O ₃/In _0.53Ga _0.47As/InP MOS capacitor (MOSCAP) structures formed using a relatively straightforward capacitor process flow and for MOSCAPs which experience the full process flow of an In _0.53Ga _0.47As n channel MOSFET. From analysis of the capacitance-voltage response over a range of ac signal frequencies fixed oxide charge densities and interface state concentrations are determined for the MOSCAP structures and the impact of forming gas annealing on oxide and interface state densities is presented. The MOSCAP results are compared to the properties of fully processed metal/Al ₂O ₃/In _0.53Ga _0.47As/InP n channel MOSFETs, and the results indicate that the findings from the MOSCAPS do translate to the measured InGaAs MOSFET characteristics.

978-156677955-5/19385862

10.1149/1.3700874