Bilousov, O. V.; Carvajal, J. J.; Vilalta-Clemente, A.; Ruterana, P.; Díaz, F.; Aguiló, M.; O’Dwyer, C.

2014

February

Chemistry of Materials

Porous GaN and high-k MgO-GaN MOS diode layers grown in a single step on silicon

Published

()

26

2

1243

1249

Porous GaN polycrystalline layers with n-type conduction characteristics were catalytically grown from Mg films formed by decomposition of a Mg2N3 precursor typically employed for activating p-type conduction in GaN. After being exposed to oxygen, the Mg film oxidized to a polycrystalline high-κ oxide between the ohmic alloy interlayer contact and the porous GaN, while maintaining a clean interface. Electrical measurements on devices coupled to composition analysis and electron microscopy of the component layers confirm that a MOS-type porous GaN diode on silicon can be formed by chemical vapor deposition in a single growth regime.

http://pubs.acs.org/doi/abs/10.1021/cm4037023

European Commission