Peer-Reviewed Journal Details
Mandatory Fields
Cabrera, W,Brennan, B,Dong, H,O'Regan, TP,Povey, IM,Monaghan, S,O'Connor, E,Hurley, PK,Wallace, RM,Chabal, YJ
2014
January
Applied Physics Letters
Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing
Validated
WOS: 23 ()
Optional Fields
ENERGY ION-SCATTERING GATE DIELECTRICS GAAS SPECTROSCOPY DESORPTION HFO2
104
Diffusion of indium through HfO2 after post deposition annealing in N-2 or forming gas environments is observed in HfO2/In0.53Ga0.47As stacks by low energy ion scattering and X-ray photo electron spectroscopy and found to be consistent with changes in interface layer thickness observed by transmission electron microscopy. Prior to post processing, arsenic oxide is detected at the surface of atomic layer deposition-grown HfO2 and is desorbed upon annealing at 350 degrees C. Reduction of the interfacial layer thickness and potential densification of HfO2, resulting from indium diffusion upon annealing, is confirmed by an increase in capacitance. (C) 2014 AIP Publishing LLC.
10.1063/1.4860960
Grant Details