Peer-Reviewed Journal Details
Mandatory Fields
O'Sullivan, BJ,Hurley, PK,O'Connor, E,Modreanu, M,Roussel, H,Jimenez, C,Dubourdieu, C,Audier, M,Senateur, JP
2004
April
Journal of the Electrochemical Society
Electrical evaluation of defects at the Si(100)/HfO2 interface
Validated
()
Optional Fields
BOND-TYPE DEFECTS P-B CENTERS SPIN-RESONANCE SI GENERATION SI/SIO2 OXIDES
151
493
496
This work examines the electrical activity of defects at the interface with Si(100) for HfO2 thin films (10- 20 nm) deposited by injection metal oxide chemical vapor deposition. Based on an analysis of the capacitance-voltage response of gold/HfO2/ Si(100) structures, two clear peaks are detected in the interface state density profiles, at specific energies in the lower (E-v + 0.22- 0.28 eV) and upper (E-v + 0.93- 0.97 eV) bandgap. The densities of defects responsible for these peaks have been calculated as 1.8-2.4 x 10(12) and 7.3- 9.1 x 10(12) cm(-2), respectively. These defects are present when the HfO2 films were deposited at sufficiently low temperatures ( T less than or equal to 350 degreesC) to prevent hydrogen passivation. The density of interface defects was not significantly different for HfO2 films deposited on native oxide or hydrogen-terminated silicon surfaces. The position of these defects in the silicon bandgap corresponds to the location of P-b0(/P-b1) dangling bond defects in the thermally oxidized Si(100)/SiO2 system. HfO2 films deposited at 450 degreesC did not exhibit the prominent interface defects observed on films deposited at T less than or equal to 350 degreesC, indicating hydrogen passivation during deposition. (C) 2004 The Electrochemical Society.
10.1149/1.1765678
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