Peer-Reviewed Journal Details
Mandatory Fields
Marquardt, O,O'Reilly, EP,Schulz, S
2014
January
Journal of Physics-Condensed Matter
Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian
Validated
WOS: 8 ()
Optional Fields
quantum dots k center dot p formalism electronic properties OPTICAL-PROPERTIES PYROELECTRIC COEFFICIENT (111)B GAAS SPECTROSCOPY WURTZITE WELLS SUPERLATTICES NANOCRYSTALS FIELD BAND
26
In this work, we present and evaluate a (111)-rotated eight-band k center dot p Hamiltonian for the zinc-blende crystal lattice to investigate the electronic properties of site-controlled InGaAs/GaAs quantum dots grown along the [ 111] direction. We derive the rotated Hamiltonian including strain and piezoelectric potentials. In combination with our previously formulated (111)-oriented continuum elasticity model, we employ this approach to investigate the electronic properties of a realistic site-controlled (111)-grown InGaAs quantum dot. We combine these studies with an evaluation of single-band effective mass and eight-band k center dot p models, to investigate the capabilities of these models for the description of electronic properties of (111)-grown zinc-blende quantum dots. Moreover, the influence of second-order piezoelectric contributions on the polarization potential in such systems is studied. The description of the electronic structure of nanostructures grown on (111)-oriented surfaces can now be achieved with significantly reduced computational costs in comparison to calculations performed using the conventional (001)-oriented models.
10.1088/0953-8984/26/3/035303
Grant Details