Peer-Reviewed Journal Details
Mandatory Fields
Bilousov, OV,Geaney, H,Carvajal, JJ,Zubialevich, VZ,Parbrook, PJ,Giguere, A,Drouin, D,Diaz, F,Aguilo, M,O'Dwyer, C
2013
September
Applied Physics Letters
Fabrication of p-type porous GaN on silicon and epitaxial GaN
Validated
WOS: 11 ()
Optional Fields
CHEMICAL-VAPOR-DEPOSITION MG-DOPED GAN YELLOW LUMINESCENCE GALLIUM NITRIDE PHOTOLUMINESCENCE PARTICLES NANOWIRES VACANCIES GROWTH FILMS
103
Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurements confirm a p-n junction commensurate with a doping density of similar to 10(18) cm(-3). Photoluminescence and cathodoluminescence confirm emission from Mg-acceptors in porous p-type GaN. (C) 2013 AIP Publishing LLC.
10.1063/1.4821191
Grant Details