Yang, H,Ye, N,Phelan, R,O'Carroll, J,Kelly, B,Han, W,Wang, X,Nudds, N,MacSuibhne, N,Gunning, F,O'Brien, P,Peters, FH,Corbett, B

2013

February

Electronics Letters

Butterfly packaged high-speed and low leakage InGaAs quantum well photodiode for 2000nm wavelength systems

Validated

WOS: 22 ()

49

281

282

An edge-coupled high-speed photodiode based on strained InGaAs quantum wells for detection at 2000nm is demonstrated. The fabricated device shows a leakage current as low as 120nA at -3V bias voltage and a responsivity of around 0.3A/W at 2000nm. The high-speed butterfly packaging of the device is presented which shows a 3dB bandwidth of more than 10GHz. The device shows similar highspeed performance at 1550nm.

10.1049/el.2012.4335