Peer-Reviewed Journal Details
Mandatory Fields
Yang, H,Ye, N,Phelan, R,O'Carroll, J,Kelly, B,Han, W,Wang, X,Nudds, N,MacSuibhne, N,Gunning, F,O'Brien, P,Peters, FH,Corbett, B
2013
February
Electronics Letters
Butterfly packaged high-speed and low leakage InGaAs quantum well photodiode for 2000nm wavelength systems
Validated
WOS: 20 ()
Optional Fields
49
281
282
An edge-coupled high-speed photodiode based on strained InGaAs quantum wells for detection at 2000nm is demonstrated. The fabricated device shows a leakage current as low as 120nA at -3V bias voltage and a responsivity of around 0.3A/W at 2000nm. The high-speed butterfly packaging of the device is presented which shows a 3dB bandwidth of more than 10GHz. The device shows similar highspeed performance at 1550nm.
10.1049/el.2012.4335
Grant Details