Peer-Reviewed Journal Details
Mandatory Fields
O'Brien, S,Copuroglu, M,Tassie, P,Nolan, MG,Hamilton, JA,Povey, I,Pereira, L,Martins, R,Fortunato, E,Pemble, ME
2011
December
Thin Solid Films
The effect of dopants on the morphology, microstructure and electrical properties of transparent zinc oxide films prepared by the sol-gel method
Validated
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Optional Fields
Zinc oxide Transparent conducting oxide Sol-gel Resistivity Morphology Crystallinity ZNO THIN-FILMS
520
1174
1177
The influence of doping on the morphology, physical and electrical properties of zinc oxide produced by the sol-gel method was examined. Undoped zinc oxide was observed to form relatively porous films. Addition of an Al dopant influenced the sheet resistance, but did not result in a change in morphology, examined by atomic force microscopy when compared to undoped films. In the case of electrical measurements, undoped ZnO films were extremely resistive. A minimum dopant concentration of 2 at.%. Al was required to produce materials which were more conductive, as observed by sheet resistance measurements, which were shown to vary with annealing temperature. The versatile nature of sol-gel processing was demonstrated by selective ink-jet deposition of sol-gel droplets which were annealed to form oxide materials. (C) 2011 Elsevier B. V. All rights reserved.
10.1016/j.tsf.2011.04.210
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