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Mooney, MB,Hurley, PK,O'Sullivan, BJ,Beechinor, JT,Zhang, JY,Boyd, IW,Kelly, PV,Senateur, JP,Crean, GM,Jimenez, C,Paillous, M
1999
September
Microelectronic Engineering
Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source.
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CHEMICAL-VAPOR-DEPOSITION ELECTRICAL-PROPERTIES TA2O5 FILMS OXIDE
48
283
286
We report the physical and electrical characteristics of the first tantalum pentoxide dielectric films as deposited by the new technique of low pressure ultraviolet-assisted injection liquid source (UVILS) chemical vapour deposition (UVILS-CVD) using the precursor tantalum tetraethoxy dimethylaminoethoxide (Ta(OEt)(4)(dmae)). The films as deposited exhibit high leakage currents due to carbon impurities. Significant porosity is found at deposition temperatures below 350 degrees C. Conventional C-V characteristics are exhibited by thick (200 Angstrom to 1000 Angstrom) as-deposited films, with dielectric constants of 17.4 to 24.
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