Foley, S,Molyneaux, J,Mathewson, A

2000

May

IEEE Transactions on Semiconductor Manufacturing

An evaluation of test methods for the detection and control of interconnect reliability

Validated

()

electromigration interconnect reliability stress-voids wafer-level ELECTROMIGRATION

13

127

135

A number of fast, wafer-level test methods exist for interconnect reliability evaluation. The relative abilities of four such methods to detect the quality and reliability of the interconnect over very short test times are evaluated in this work. Four different test structure designs are also evaluated, and the results are compared with package-level median time to failure (MTF) results. The Isothermal test method combined with Standard Wafer-Level Electromigration Accelerated Test (SWEAT)-type test structures is shown to be the most suitable combination for defect detection and interconnect reliability control over short test times.