Peer-Reviewed Journal Details
Mandatory Fields
Brennan, B,Galatage, RV,Thomas, K,Pelucchi, E,Hurley, PK,Kim, J,Hinkle, CL,Vogel, EM,Wallace, RM
2013
September
Journal of Applied Physics
Chemical and electrical characterization of the HfO2/InAlAs interface
Validated
()
Optional Fields
SYNCHROTRON-RADIATION PHOTOEMISSION GAAS(100) SURFACES SEMICONDUCTOR IMPACT
114
InAlAs has the potential to be used as a barrier layer in buried channel quantum well field effect transistor devices due to favorable lattice-matching and carrier confinement properties with InGaAs. Field effect device structures of this nature may also require a high-k oxide deposited on the InAlAs surface to reduce leakage current. This study investigates the impact of surface preparations and atomic layer deposition of HfO2 on these surfaces using x-ray photoelectron spectroscopy to analyse the chemical interactions taking place, as well as the electrical performance of associated capacitor devices. A large concentration of As related surface features is observed at the InAlAs surface, and is attributed to a large D-it response in electrical measurements. (C) 2013 AIP Publishing LLC.
10.1063/1.4821021
Grant Details