Zhang, JY,Fang, Q,Wu, JX,Xu, CY,O'Sullivan, BJ,Hurley, PK,Leedham, TL,Audier, MA,Senateur, JP,Boyd, IW

2001

December

Journal De Physique Iv

Photo-CVD deposited TiO(2) films studied by Raman and XPS spectroscopy

Validated

()

CHEMICAL-VAPOR-DEPOSITION INJECTION LIQUID SOURCE THIN-FILMS ELECTRICAL-PROPERTIES

11

295

299

We report the deposition of thin titanium oxide films on Si (100) and quartz at low temperatures between 100-350degreesC by photo-induced chemical vapour deposition (photo-CVD) with 222 nm radiation using, an injection liquid source. The thickness of the films grown, from several nanometres to micrometres can be accurately controlled by changing the number of drops injected. Under optimum deposition conditions, refractive index values as high as 2.5, optical transmittance of between 85-90% in the visible region of the spectrum and leakage current densities as low as 10(-6) A/cm(2) can be obtained. XPS analysis has shown that the composition of titanium oxide was TiO(2) and that the carbon content was very low (<5%). The nanostructure of the films deposited on Si wafers was examined by atomic force microscopy (AFM), Raman spectroscopy showed that crystalline TiO(2) layers could be formed at deposition temperatures as low as 210 degrees C with characteristic peaks of anatase-TiO(2) being found at 142, 395 and 638 cm(-1), respectively. Details of the leakage current density. and other electrical properties of the TiO(2), films are also discussed.