Peer-Reviewed Journal Details
Mandatory Fields
Lee, KB,Parbrook, PJ,Wang, T,Bai, J,Ranalli, F,Airey, RJ,Hill, G
2009
May
Journal of Crystal Growth
Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes
Validated
()
Optional Fields
Quantum wells Metalorganic vapor phase epitaxy AlGaN Light-emitting diodes EMISSION NM
311
2857
2859
The effect of the AlGaN electron blocking layer (EBL) thickness on the electrical and optical properties of 310 nm AlGaN single quantum well (SQW) light-emitting diodes (LEDs) has been investigated. A large ideality factor extracted from the current-voltage (I-V) characteristics indicates that a tunneling mechanism dominates the carrier transport process in the LEDs. The ideality factor decreases with increasing EBL thickness suggesting that deep-level state assisted tunneling is reduced. In addition, the QW emission intensity is enhanced with the introduction of an EBL due to the reduction of electron overflow to the p-type layer. The QW emission intensity is sensitive to the EBL thickness. This is attributed to the reduction of electron tunneling to the p-type layer with an EBL. (C) 2009 Elsevier B.V. All rights reserved.
10.1016/j.jcrysgro.2009.01.030
Grant Details