Peer-Reviewed Journal Details
Mandatory Fields
Sander, T,Teubert, J,Klar, PJ,Lindsay, A,O'Reilly, EP
2011
June
Physical Review B
Effect of localized boron impurities on the line shape of the fundamental band gap transition in photomodulated reflectance spectra of (B, Ga, In)As
Validated
WOS: 7 ()
Optional Fields
EMITTING LASER STRUCTURES MODULATION SPECTROSCOPY ELECTRONIC-STRUCTURE ALLOYS BXGA1-XAS
83
Photomodulated reflectance (PR) spectra of (B, Ga, In) As epilayers reveal unusual changes of the fundamental band gap PR line shape with temperature and hydrostatic pressure. We show that these changes arise because temperature variation or hydrostatic pressure shifts the conduction band edge (CBE) into resonance with boron-related cluster states. The resulting line shape changes are described by a level repulsion model which yields states of mixed character with an exchange of oscillator strengths. This model is corroborated by theoretical calculations which show a finite density of boron cluster states above the CBE at room temperature, with appropriate symmetry to couple to the CBE state.
10.1103/PhysRevB.83.235213
Grant Details