Hurley, PK,Stesmans, A,Afanas'ev, VV,O'Sullivan, BJ,O'Callaghan, E

2003

April

Journal of Applied Physics

Analysis of P-b centers at the Si(111)/SiO2 interface following rapid thermal annealing

Validated

WOS: 26 ()

ELECTRON-SPIN-RESONANCE SI(100)-SIO2 INTERFACE SI/SIO2 INTERFACE DOPED SI SILICON OXIDE OXIDATION DEFECTS STATES TRAPS

93

3971

3973

In this work, an experimental study of defects at the Si(111)/SiO2 interface following rapid thermal annealing (RTA) in a nitrogen ambient at 1040 degreesC is presented. From a combined analysis using electron spin resonance and quasistatic capacitance-voltage characterization, the dominant defects observed at the Si(111)/SiO2 interface following an inert ambient RTA process are identified unequivocally as the P-b signal (interfacial Si-3=Si-.) for the oxidized Si(111) orientation. Furthermore, the P-b density inferred from electron spin resonance (7.8+/-1)x10(12) cm(-2), is in good agreement with the electrically active interface state density (6.7+/-1.7)x10(12) cm(-2) determined from analysis of the quasistatic capacitance-voltage response. (C) 2003 American Institute of Physics.

10.1063/1.1559428