Paul K. Hurley, Eamon O'Connor, Scott Monaghan, Rathnait Long, Aileen O'Mahony, Ian M. Povey, Karim Cherkaoui, John MacHale, Aidan Quinn, Guy Brammertz, Marc M. Heyns, Simon Newcomb, Valeri V. Afanas'ev, Arif Sonnet, Rohit Galatage, Naqi Jivani, Eric Vogel, Robert M. Wallace and Martyn Pemble

2009

January

ECS Transactions

Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)

Published

()

25

6

113

127

In this work results are presented of an investigation into the structural and electrical properties of HfO2 films on GaAs and InxGa1-xAs substrates for x: 0.15, 0.30, and 0.53. The capacitancevoltage responses of the GaAs and InxGa1-xAs (x: 0.15 and 0.30) are dominated by an interface defect response. Analysis of these samples at 77K indicates that the defect density is > 2.5x1013 cm-2. For the HfO2/In0.53Ga0.47As system, 77K capacitance-voltage responses indicate surface accumulation is achieved. The results are consistent with a high defect density, with an energy level {greater than or equal to}0.75 eV above the valence band in the HfO2/InxGa1-xAs system, where the defect energy with respect to the valence band, does not change with the composition of the InxGa1-xAs. The HfO2/In0.53Ga0.47As interface exhibits two defects at 0.3eV (1.7x1013cm-2eV) and 0.61eV (1.5x1013cm-2eV) above the valance band edge. The defect at 0.61eV is removed by forming gas annealing at 325oC.

https://doi.org/10.1149/1.3206612

https://doi.org/10.1149/1.3206612

Science Foundation Ireland

Science Foundation Ireland (Projects 05/IN/1751 and 07/SRC/I1172) and the INTEL/IRCSET studentships scheme.