Peer-Reviewed Journal Details
Mandatory Fields
Vaughan, MP; F. Murphy-Armando, F; Fahy S
Physical Review B
First-principles investigation of the alloy scattering potential in dilute Si1−xCx
Optional Fields
A first-principles method is applied to find the intra and intervalley n-type carrier scattering rates for substitutional carbon in silicon. The method builds on a previously developed first-principles approach with the introduction of an interpolation technique to determine the intravalley scattering rates. Intravalley scattering is found to be the dominant alloy scattering process in Si1−xCx, followed by g-type intervalley scattering. Mobility calculations show that alloy scattering due to substitutional C alone cannot account for the experimentally observed degradation of the mobility. We show that the incorporation of additional charged impurity scattering due to electrically active interstitial C complexes models this residual resistivity well.
Grant Details
Science Foundation Ireland