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Mandatory Fields
Vaughan, MP; Fahy, S
2010
Unknown
Journal of Physics: Conference Series
First principles calculations of the scattering cross section of substitutional carbon in silicon
Published
0
Optional Fields
242
012003
A method of calculating scattering cross-sections based on first principles electronic structure calculations, previously used for alloy scattering in SiGe is presented and applied to substitutional carbon in silicon. It is found that the intravalley scattering is the predominant scattering mechanism with a contribution to the scattering rate around a factor of 4 greater than intravalley alloy scattering in SiGe.
10.1088/1742-6596/242/1/012003
Grant Details