Dehdashti, N.,Afzalian, A.,Lee, C. W.,Yan, R.,Fagas, G.,Colinge, J. P.

2009

Iwce-13: 2009 13th International Workshop On Computational Electronicsiwce-13: 2009 13th International Workshop On Computational Electronics

Device characteristics of Trigate-FET with barrier constrictions in the channel

Validated

()

246

249

We have investigated the effect of symmetric geometrical constrictions on the device characteristics of ultrathin silicon-on-insulator (SOI) nanowire with Trigate structure by means of the full real-space three dimensional Nonequilibrium Greens's Function (NEGF) method. In this study, geometrical constrictions are introduced as energy barriers near the source and the drain junctions and their strength is modulated by the potential height and the geometry. Interestingly, even at room temperature the drain current in the device shows oscillations as a function of the applied gate voltage. This can be traced to the development of transmission resonances as the channel is additionally confined along the current direction.We have investigated the effect of symmetric geometrical constrictions on the device characteristics of ultrathin silicon-on-insulator (SOI) nanowire with Trigate structure by means of the full real-space three dimensional Nonequilibrium Greens's Function (NEGF) method. In this study, geometrical constrictions are introduced as energy barriers near the source and the drain junctions and their strength is modulated by the potential height and the geometry. Interestingly, even at room temperature the drain current in the device shows oscillations as a function of the applied gate voltage. This can be traced to the development of transmission resonances as the channel is additionally confined along the current direction.

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