Peer-Reviewed Journal Details
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Bilousov, O. V., Carvajal, J. J., Geaney, H., Díaz, F., Aguiló, M. & O’Dwyer, C.
Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition
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LEDs with enhanced light extraction efficiency and sensors with improved sensitivity have been developed using porous semiconductors. Here, the growth of porous GaN epitaxial layers oriented along the [0001] crystallographic direction on Al2O3, SiC, AlN and GaN substrates is demonstrated. A lattice mismatch between the substrate and the porous GaN layer directly affects the structure and porosity of the porous GaN layer on each substrate. Deposition of unintentionally doped n-type porous GaN on non-porous p-type GaN layers allows for the fabrication of high quality rectifying p–n junctions, with potential applications in high brightness unencapsulated GaN-based light emitting diodes and high surface area wide band gap sensor devices.!divAbstract
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