Leveugle, C and Hurley, PK and Mathewson, A and Moran, S and Sheehan, E and Kalnitsky, A and Lepert, A and Beinglass, I and Venkatesan, M

1997

January

Microelectronic engineering

Impact of the polysilicon doping level on the properties of the< i> silicon/oxide interface in polysilicon/oxide/silicon capacitor structures

Validated

36

1

215

218