Breddermann, B,Baumner, A,Koch, SW,Ludewig, P,Stolz, W,Volz, K,Hader, J,Moloney, JV,Broderick, CA,O'Reilly, EP

2014

October

Journal of Luminescence

Luminescence properties of dilute bismide systems

Validated

WOS: 6 ()

Dilute bismides Optical properties Photoluminescence Band structure SEMICONDUCTOR GAIN

154

95

98

Systematic photoluminescence measurements on a series of GaBixAs1-x samples are analyzed theoretically using a fully microscopic approach. Based on sp(3)s* tight-binding calculations, an effective k. p model is set up and used to compute the band structure and dipole matrix elements for the experimentally investigated samples. With this input, the photoluminescence spectra are calculated using a systematic microscopic approach based on the semiconductor luminescence equations. The detailed theory-experiment comparison allows us to quantitatively characterize the experimental structures and to extract important sample parameters. (C) 2014 Elsevier B.V. All rights reserved.

10.1016/j.jlumin.2014.04.012