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Authors

Gocalinska, A,Manganaro, M,Pelucchi, E,Ihn, T,Rossler, C,Kozikov, A

Conference Title

Surfactant role of (TM)Sb in MOVPE growth of metamorphic InGaAs graded buffers

Title of Paper

PHYSICS OF SEMICONDUCTORS

Year

2013

Month

January

Status

Validated

Peer Reviewed

Times Cited

()

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Keywords

InAs InGaAs TMSb surfactant metamorphic buffer MOVPE

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Abstract

We present a virtual substrate for high quality InAs epitaxial layer, obtained via metalorganic vapor-phase epitaxy growth of Sb-assisted InxGa1-As-x metamorphic buffers, following a convex compositional continuous gradient of the In content from x = 53 % to 100 %. The use of Trimethylantimony (or its decomposition products) as a surfactant was found to be a suitable way to control defect formation during the relaxation process. Reliably uniform growth with good morphology was obtained on crystals with misorientation toward [111] B direction.

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DOI Link

10.1063/1.4848263

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