Conference Publication Details
Mandatory Fields
Gocalinska, A,Manganaro, M,Pelucchi, E,Ihn, T,Rossler, C,Kozikov, A
Surfactant role of (TM)Sb in MOVPE growth of metamorphic InGaAs graded buffers
PHYSICS OF SEMICONDUCTORS
2013
January
Validated
1
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Optional Fields
InAs InGaAs TMSb surfactant metamorphic buffer MOVPE
17
18
We present a virtual substrate for high quality InAs epitaxial layer, obtained via metalorganic vapor-phase epitaxy growth of Sb-assisted InxGa1-As-x metamorphic buffers, following a convex compositional continuous gradient of the In content from x = 53 % to 100 %. The use of Trimethylantimony (or its decomposition products) as a surfactant was found to be a suitable way to control defect formation during the relaxation process. Reliably uniform growth with good morphology was obtained on crystals with misorientation toward [111] B direction.
10.1063/1.4848263
Grant Details