Peer-Reviewed Journal Details
Mandatory Fields
Bondarenko, VP and Bogatirev, YV and Colinge, JP and Dolgyi, LN and Dorofeev, AM and Yakovtseva, VA
1997
January
Total gamma dose characteristics of CMOS devices in SOI structures based on oxidized porous silicon
Validated
()
Optional Fields
44
5
1719
1723
Grant Details