Peer-Reviewed Journal Details
Mandatory Fields
Dambrine, G and Raskin, JP and Danneville, F and Vanhoenacker-Janvier, D and Colinge, JP and Cappy, A
1999
January
PAPERS-Solid-State Device Phenomena-High-Frequency Four Noise Parameters' of Silicon-on-Insulator-Based Technology MOSFET for the Design of Low-Noise RF Integrated Circuits
Validated
()
Optional Fields
46
8
1733
1741
Grant Details