Peer-Reviewed Journal Details
Mandatory Fields
Dinh, D. V.; Conroy, M.; Zubialevich, V. Z.; Petkov, N.; Holmes, J. D.; Parbrook, P. J.
2015
January
Journal of Crystal Growth
Single phase (1122) AlN grown on (1010) sapphire by metalorganic vapour phase epitaxy
Published
()
Optional Fields
414
94
99
Heteroepitaxial growth of AlN buffer layers directly on(101-0) sapphire substrates by metalorganic vapour phase epitaxy has been investigated. A single-step growth procedure without a sapphire nitridation was employed resulting in mirror-like crack free 1:11:6 μm thick AlN layers of single phase (112-2) orientation. Trimethylaluminum pre-dose time and reactor pressure were optimized for surface roughness and crystal quality. The crystal quality was found to degrade with increasing pre-dose time and also reactor pressure. The smallest full width at half maximum value for on-axis X-ray rocking curve of the (112-2) AlN layers was about 610 arc sec and 1480 arc sec along [-1-123] AlN and [1-100] AlN, respectively. The surface roughness, measured by atomic force microscopy using a 10 x 10 μm2 area, aas in the range 2.63.5 nm. A basal stacking fault density of 7 x 105 cm-1 was estimated by transmission electron microscopy.
Amsterdam, The Netherlands
http://www.sciencedirect.com/science/journal/00220248
10.1016/j.jcrysgro.2014.09.043
Grant Details
Science Foundation Ireland