Carvajal, J. J., Mena, J., Bilousov, O. V., Martínez, O., Jiménez, J., Zubialevich, V., Parbrook, P., Geaney, H., O'Dwyer, C., Díaz, F. & Aguiló, M.

2015

May

ECS Transactions

Fully Porous GaN p-n Junctions Fabricated by Chemical Vapor Deposition: A Green Technology towards More Efficient LEDs

Published

()

66

1

163

176

Porous GaN based LEDs produced by corrosion etching techniques have demonstrated enhanced light extraction efficiencies in the past. However, these fabrication techniques require further post-growth processing steps, which increase the price of the final device. In this paper, we review the process we developed for the formation of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction.

http://ecst.ecsdl.org/content/66/1/163.abstract

10.1149/06601.0163ecst