Peer-Reviewed Journal Details
Mandatory Fields
Connaughton, S.; Hobbs, R.; Lotty, O.; Holmes, J. D.; Krstić, V.
2015
May
Advanced Materials Interfaces
Variation of self-seeded germanium nanowire electronic device functionality due to synthesis condition determined surface states
Published
WOS: 3 ()
Optional Fields
2
5
1400469(1)
1400469(8)
An approach to direct the intrinsic electronic transport properties of self-seeded germanium nanowires at room temperature by in situ synthesis conditions is presented. The electrical response is varied between quasi-metallic and p-type semiconductors with memristive signatures. Electron transfer between nanowire core and core–shell surface states governs both conduction regimes and a simplified developed model reproduces the main memristive features.
Hoboken, NJ, USA
http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2196-7350
10.1002/admi.201400469
Grant Details