Connaughton, S.; Hobbs, R.; Lotty, O.; Holmes, J. D.; Krstić, V.

2015

May

Advanced Materials Interfaces

Variation of self-seeded germanium nanowire electronic device functionality due to synthesis condition determined surface states

Published

WOS: 5 ()

2

5

1400469(1)

1400469(8)

An approach to direct the intrinsic electronic transport properties of self-seeded germanium nanowires at room temperature by in situ synthesis conditions is presented. The electrical response is varied between quasi-metallic and p-type semiconductors with memristive signatures. Electron transfer between nanowire core and core–shell surface states governs both conduction regimes and a simplified developed model reproduces the main memristive features.

Hoboken, NJ, USA

http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2196-7350

10.1002/admi.201400469