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Authors

Minehane, S,O'Sullivan, P,Mathewson, A,Mason, B,IEEE

Conference Title

Evolution of BSIM3v3 parameters during hot-carrier stress

Title of Paper

1997 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT

Year

1997

Month

October

Status

Validated

Peer Reviewed

Times Cited

()

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Start Page

110

End Page

118

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End Date

Abstract

A novel direct parameter extraction strategy for the BSIM3v3 MOSFET model, and it's application to hot-carrier reliability simulation, is presented in this paper. The use of direct techniques produces physically-relevant SPICE parameters from a minimum number of device I-V measurements. The change in the parameter values during hot-carrier stress exhibit a more monotonic trend than those obtained using conventional parameter optimization techniques. The application of a direct SPICE parameter extraction scheme to the hot-carrier reliability problem also makes the extraction routines repeatable over a wide range of experimental conditions.One of the key components in any circuit reliability simulation methodology is a strategy for predicting the hot-carrier-induced changes in device parameters during stress. A new approach for the fitting of the evolution of directly-extracted BSIM3v3 parameters during stress is presented.

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