Smith, MD;Taylor, E;Sadler, TC;Zubialevich, VZ;Lorenz, K;Li, HN;O'Connell, J;Alves, E;Holmes, JD;Martin, RW;Parbrook, PJ

2014

January

Journal of Materials Chemistry C

Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD

Validated

WOS: 19 ()

VAPOR-PHASE EPITAXY THIN-FILMS UNINTENTIONAL INCORPORATION LAYERS GALLIUM ORIGINS ALINN

2

5787

5792

We report on the consistent measurement of gallium incorporation in nominal InAlN layers using various complimentary techniques, underpinned by X-ray diffraction. Nominal InAlN layers with similar growth conditions were prepared, and the change in unintended Ga content in the group III sublattice ranged from similar to 24% to similar to 12% when the total reactor flow rate was increased from 8000 to 24 000 standard cubic centimetres per minute. Ultra-thin InAlN/GaN HEMT layers were grown in a clean reactor to minimize Ga auto-incorporation, and measured using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The implications of Ga incorporation in InAlN layers within optoelectronic and power devices is discussed.

CAMBRIDGE

2050-7526

10.1039/c4tc00480a