Peer-Reviewed Journal Details
Mandatory Fields
Filippone, B;Donaldson, C;Shayesteh, M;O'Connell, D;Huet, K;Toque-Tresonne, I;Crupi, F;Duffy, R
2016
January
ECS Journal of Solid State Science and Technology
Electrical Characterization of the Influence of the Annealing Energy Density on Carrier Lifetimes in Germanium
Validated
WOS: 1 ()
Optional Fields
DOPANT ACTIVATION LEAKAGE CURRENT SILICON GE DIFFUSION SURFACE WAFERS
5
3013
3017
In this work the authors examine the influence of the annealing energy density on carrier lifetime of n(+)/p Ge diodes processed by laser thermal annealing (LTA) and rapid thermal annealing (RTA). Current-voltage and capacitance-voltage measurements have been performed, and subsequently the reverse current and capacitance were separated into bulk and peripheral components to extract carrier lifetime: this allows the estimation of the bandgap position of the generation-recombination centres. The results indicate that the generation lifetime increases with increasing laser anneal energy density, coinciding with better crystal quality. (C) 2015 The Electrochemical Society. All rights reserved.
PENNINGTON
2162-8769
10.1149/2.0031604jss
Grant Details