Peer-Reviewed Journal Details
Mandatory Fields
Gocalinska, A;Manganaro, M;Pelucchi, E
2012
April
Applied Physics Letters
Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure
Validated
WOS: 17 ()
Optional Fields
TEMPERATURE RELAXATION LAYERS
100
A virtual substrate for high quality InAs epitaxial layer has been attained via metalorganic vapor-phase epitaxy growth of Sb-assisted InxGa1-xAs metamorphic buffers, following a convex compositional continuous gradient of the In content from x = 53% to 100%. The use of trimethylantimony (or its decomposition products) as a surfactant has been found to crucially enable the control over the defect formation during the relaxation process. Moreover, an investigation of the wafer offcut-dependence of the defect formation and surface morphology has enabled the achievement of a reliably uniform growth on crystals with offcut towards the [111] B direction. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3703587]
MELVILLE
0003-6951
10.1063/1.3703587
Grant Details