Dinh, DV;Oehler, F;Zubialevich, VZ;Kappers, MJ;Alam, SN;Caliebe, M;Scholtz, F;Humphreys, CJ;Parbrook, PJ

2014

October

Journal of Applied Physics

Comparative study of polar and semipolar (11(2)over-bar2) InGaN layers grown by metalorganic vapour phase epitaxy

Validated

WOS: 11 ()

YELLOW LUMINESCENCE GAN LOCALIZATION SAPPHIRE POWER

116

InGaN layers were grown simultaneously on (11 (2) over bar2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (>= 750 degrees C), the indium content (<15%) of the (11<(2)over bar>2) and (0001) InGaN layers was similar. However, for temperatures less than 750 degrees C, the indium content of the (11 (2) over bar2) InGaN layers (15%-26%) were generally lower than those with (0001) orientation (15%-32%). The compositional deviation was attributed to the different strain relaxations between the (11 (2) over bar2) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (11 (2) over bar2) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (11 (2) over bar2) InGaN layers with an indium content of more than 10% blue-shifted a constant value of approximate to(50-60) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers. (C) 2014 AIP Publishing LLC.

MELVILLE

0021-8979

10.1063/1.4898569