Conference Publication Details
Mandatory Fields
Duffy, R;Shayesteh, M;White, M;Kearney, J;Kelleher, AM
SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS
Problems Of N-type Doped Regions In Germanium, Their Solutions, And How To Beat The ITRS Roadmap
2011
January
Validated
1
WOS: 17 ()
Optional Fields
JUNCTIONS ACTIVATION DOPANTS
185
192
In this paper the authors discuss the issues surrounding the formation of ultrashallow n-type junctions in Ge. In general the n-type dopants are relatively difficult to activate and diffuse quickly, leading to high access resistances and limited capability to reduce the device dimensions, respectively. Sheet resistance (R-s) was calculated for n-type box-like profiles in Si and Ge. To achieve ITRS Roadmap targets in Si an active doping concentration of 1.5-2x10(20) cm(-3) is required, but due to the enhanced electron mobility it is predicted approximately 6x10(19) cm(-3) is sufficient in Ge.
10.1149/1.3568860
Grant Details