Zubialevich, VZ;Sadler, TC;Dinh, DV;Alam, SN;Li, HN;Pampili, P;Parbrook, PJ

2014

November

Luminescence

Enhanced UV luminescence from InAlN quantum well structures using two temperature growth

Validated

WOS: 14 ()

LIGHT-EMITTING-DIODES EPITAXIAL-GROWTH EMISSION GAN SAPPHIRE LAYERS

155

108

111

InAlN/AlGaN multiple quantum wells (MQWs) emitting between 300 and 350 nm have been prepared by metalorganic chemical vapor deposition on planar AlN templates. To obtain strong room temperature luminescence from InAlN QWs a two temperature approach was required. The intensity decayed weakly as the temperature was increased to 300 K, with ratios I-PL(300 K)/I-PL(T)(max) up to 70%. This high apparent internal quantum efficiency is attributed to the exceptionally strong carrier localization in this material, which is also manifested by a high Stokes shift (0.52 eV) of the luminescence. Based on these results InAlN is proposed as a robust alternative to AlGaN for ultraviolet emitting devices. (C) 2014 Elsevier B.V. All rights reserved.

AMSTERDAM

0022-2313

10.1016/j.jlumin.2014.06.033