Peer-Reviewed Journal Details
Mandatory Fields
Okholin, R;Glotov, VI;Nazarov, AN;Yuchymchuk, VO;Kladko, VP;Kryvyi, SB;Lytvyn, PM;Tiagulskyi, SI;Lysenko, VS;Shayesteh, M;Duffy, R
2016
February
Materials Science In Semiconductor Processing
RF plasma treatment of shallow ion-implanted layers of germanium
Validated
WOS: 6 ()
Optional Fields
SILICON
42
204
209
RF plasma annealing (RFPA) and rapid thermal annealing (RTA) of high-dose implanted n-type and p-type amorphized Ge layers have been studied by Raman scattering spectroscopy and X-ray diffraction techniques. It is shown that recrystallization of n-Ge implanted by BF2+ ions requires higher RTA temperatures and power density of RFPA as compared to p-Ge implanted by P+ ions with the same dose. The RFPA has been performed at considerably lower temperatures than RTA and resulted in the formation of a sharp interface between the implanted and underlying Ge layers both for BF ion implantation and P+ ions implantation. (C) 2015 Elsevier Ltd. All rights reserved.
OXFORD
1369-8001
10.1016/j.mssp.2015.08.028
Grant Details