Smith, MD;Sadler, TC;Li, HN;Zubialevich, VZ;Parbrook, PJ

2013

August

Applied Physics Letters

The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures

Validated

WOS: 7 ()

103

The effects of AlN interlayer growth conditions on InAlN/AlN/GaN heterostructures are investigated, with interlayers imaged as they would appear prior to InAlN barrier layer deposition using surface atomic force microscopy scans undertaken immediately after growth. Surface morphologies and subsequent heterostructure conductivity suggested minimum on-resistance can be achieved by balancing the underlying GaN channel decomposition and interfacial roughening when deciding AlN interlayer growth parameters on a sapphire substrate of a given miscut. (C) 2013 AIP Publishing LLC.

MELVILLE

0003-6951

10.1063/1.4818645