Ye, N;Yang, H;Gleeson, M;Pavarelli, N;Zhang, HY;O'Callaghan, J;Han, W;Nudds, N;Collins, S;Gocalinska, A;Pelucchi, E;O'Brien, P;Gunning, FCG;Peters, FH;Corbett, B

2015 PHOTONICS CONFERENCE (IPC)

AlInGaAs Surface Normal Photodiode for 2 mu m Optical Communication Systems

2015

January

Validated

1

()

High bandwidth 2 mu m wavelength surface normal p-i-n photodiodes using a high indium-content InGaAs strain-relaxed absorbing layer clad by p and n doped AIInGaAs layers are realised. A parabolic grading was used to relax the lattice constant from that of the InP substrate. We compare structures with different p-doping profiles and absorber thicknesses to achieve a 3-dB bandwidth of around 10 GHz while maintaining a photoresponsivity of 0.93 A/W. A clear opening of the 10 Gbit/s eye pattern was obtained with an input power of -3.07 dBm. By temperature-control of the mesa passiva lion process the device leakage was reduced to 0.52 mu A at-5 V bias.