Daunt, CLM;Cleary, CS;Manning, RJ;Thomas, K;Young, RJ;Pelucchi, E;Corbett, B;Peters, FH

2012

November

IEEE Journal of Quantum Electronics

Sub 10 ps Carrier Response Times in Electroabsorption Modulators Using Quantum Well Offsetting

Validated

WOS: 4 ()

BIPOLAR-TRANSISTOR STRUCTURES INTEGRATION SATURATION CIRCUITS RECOVERY DESIGN LASERS INP ZN

48

1467

1475

Sub 10 ps photocarrier response time in an electroabsoption modulator using a custom epitaxy structure is demonstrated. This design used quantum well offsetting, carbon doping, and valence band discontinuity minimization, to achieve a 3.5 ps response time, when biased at -4.5 V. The quantum well offsetting also allows bandwidth optimization for a specific extinction ratio.

PISCATAWAY

0018-9197

10.1109/JQE.2012.2210862