A modification to heterodimensional field effect transistors (HDFET) is introduced and demonstrated to provide novel switching capabilities. The modification consists of introducing a split drain into the HDFET structure allowing the transistor to operate as a single pole-double throw switch. By extension, multiple pole-multiple throw switches can be made within a single transistor structure by introduction of multiple split drains or sources. If the device is fabricated on silicon germanium substrates, compatibility of the structure with conventional CMOS processing is achievable, allowing for new applications in digital, mixed signal, and high voltage switching.