Peer-Reviewed Journal Details
Mandatory Fields
Povey, IM;Bardosova, M;Dillon, FC;Chalvet, F;Pemble, ME;Thomas, K
2008
November
Thin Solid Films
A comparison of the GaAs atomic layer deposition infiltration of photonic crystals engineered by the controlled evaporation and Langmuir-Blodgett methods
Validated
()
Optional Fields
COLLOIDAL CRYSTALS OPTICAL-PROPERTIES OPALS GROWTH THICKNESS INP
517
811
813
Photonic crystal thin films were fabricated on glass substrates both by the controlled evaporation method and the Langmuir-Blodgett deposition of a lattice of silica spheres. Infilling of the air spaces within the structures with GaAs was achieved using trimethylgallium and arsine tinder atomic-layer-deposition conditions. The effect of infiltration on the (2+1) dimensional structure of Langmuir-Blodgett photonic crystals, as compared to the face-centred cubic structure of controlled evaporation photonic crystals, is directly investigated with respect to the observed optical properties. (C) 2008 Elsevier B.V. All rights reserved.
LAUSANNE
0040-6090
10.1016/j.tsf.2008.08.178
Grant Details