Mandatory Fields

Contributor (s)

Stefan Schulz

Conference Title

International Workshop on Nitride Semiconductors

Short Description

Electronic and Optical Properties of c‐ and m‐Plane InGaN Quantum Wells—Influence of Structural Inhomogeneities and Random Alloy Fluctuations

Location

Orlando, Florida, USA

Contribution Type

Invited Oral Presentation

Year

2016

Times Cited

()

Peer Reviewed

Optional Fields

Start Date

02-OCT-16

End Date

07-OCT-16

Abstract

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