Gity, F,Byun, KY,Lee, KH,Cherkaoui, K,Hayes, JM,Morrison, AP,Colinge, C,Corbett, B,Roozeboom, F,Kakushima, K,Iwai, H,Timans, PJ,Narayanan V,Kwong, DL,Gusev, EP

Ge/Si p-n Diode Fabricated by Direct Wafer Bonding and Layer Exfoliation

SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 2

2012

December

Validated

1

WOS: 5 ()

TEMPERATURE ANNEALED HYDROGEN ON-INSULATOR STRAINED SI GERMANIUM SILICON PERFORMANCE PHOTODETECTOR

131

139

We report on the formation and electrical characterization of current transport across a p-Ge to n-Si diode structure obtained by direct wafer bonding and layer exfoliation. A low temperature anneal at 400 degrees C for 30 minutes improved the forward characteristics of the diode. The I-on/I-off ratio > 5x10(4) and > 8x10(3) is obtained at -0.5 V and -1 V, respectively The carrier transport mechanism was analyzed based on the I-V and C-V measurements and direct tunneling is suggested as the transport mechanism. This fabrication technique using a low thermal budget (T <= 400 degrees C) is an attractive option for heterogeneous integration.

10.1149/1.3700946