Yu, R,Byun, KY,Gity, F,Hayes, J,Ferain, I,Colinge, C,Corbett, B,Colinge, C,Baumgart, H,Moriceau, H,Bagdahn, J,Hobart, KD,Suga, T

Structural and electrical properties of low temperature direct bonded Germanium to Silicon wafer for photodetector applications

SEMICONDUCTOR WAFER BONDING 11: SCIENCE, TECHNOLOGY, AND APPLICATIONS - IN HONOR OF ULRICH GOSELE

2010

October

Validated

1

Altmetric: 2 ()

HYDROXYL-GROUPS ACTIVATION DIODES SI

161

168

A Ge/Si heterostructure with an ultra-thin transition layer was fabricated at low temperature by direct bonding. In-situ oxygen or nitrogen radical activation was performed after hydrophilic cleaning on both Germanium (Ge) and Silicon (Si) surfaces. The interfacial structure was analyzed by Scanning Acoustic Microscopy (SAM) and High-Resolution Transmission Electron Microscopy (HR-TEM). The samples were diced into mesa structures and electrical properties at different locations were used in order to characterize the quality of the bonded heterostructure.

10.1149/1.3483504