Akhter, M,Pampili, P,Zubialevich, VZ,Eason, C,Quan, ZH,Maaskant, PP,Parbrook, PJ,Corbett, B

2015

February

Electronics Letters

Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs

Validated

()

LIGHT-EMITTING-DIODES

51

354

75

Bandwidth measurements of deep ultra-violet micro-light-emitting diode (LED) electroluminescence centred at 250 nm using a multiple quantum well aluminium gallium nitride (AlGaN)-based LED structure grown on a sapphire substrate is presented. By controlled etching of the wafer surface, parabolically shaped micro-LED structures were formed to enhance light emission through the substrate. Devices were tested on-wafer and bandwidth measurements were carried out on individual emission peaks from the devices. A bandwidth of more than 20 MHz was achieved on the 250 nm peak.

10.1049/el.2014.4253