Conference Publication Details
Mandatory Fields
Saladukha, D,Ochalski, TJ,Murphy-Armando, F,Clavel, MB,Hudait, MK,Witzigmann, B,Osinski, M,Arakawa, Y
Pushing the limits of silicon transistors
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXIV
2016
January
Validated
1
()
Optional Fields
Ge photoluminescence tensile Ge Ge InGaAs Ge Si Ge TFET silicon photonics biaxial strain Ge Ge k.p
In this work we study Ge transistor structures grown on silicon substrate. We use photoluminescence to determine the band gap of Ge under tensile strain. The strain is induced by growing Ge on an InGaAs buffer layer with variable In content. The band energy levels are modeled using a 30 band k.p model based on first principles calculations. Photoluminescence measurements show a reasonable correspondence with calculated values of the band energies.
10.1117/12.2209606
Grant Details