Peer-Reviewed Journal Details
Mandatory Fields
Mirabelli, G,Schmidt, M,Sheehan, B,Cherkaoui, K,Monaghan, S,Povey, I,McCarthy, M,Bell, AP,Nagle, R,Crupi, F,Hurley, PK,Duffy, R
AIP Advances
Back-gated Nb-doped MoS2 junctionless field-effect-transistors
Optional Fields
Electrical measurements were carried out to measure the performance and evaluate the characteristics of MoS2 flakes doped with Niobium (Nb). The flakes were obtained by mechanical exfoliation and transferred onto 85 nm thick SiO2 oxide and a highly doped Si handle wafer. Ti/Au (5/45 nm) deposited on top of the flake allowed the realization of a back-gate structure, which was analyzed structurally through Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). To best of our knowledge this is the first cross-sectional TEM study of exfoliated Nb-doped MoS2 flakes. In fact to date TEM of transition-metal-dichalcogenide flakes is extremely rare in the literature, considering the recent body of work. The devices were then electrically characterized by temperature dependent I-ds versus V-ds and I-ds versus V-bg curves. The temperature dependency of the device shows a semiconductor behavior and, the doping effect by Nb atoms introduces acceptors in the structure, with a p-type concentration 4.3 x 10(19) cm(-3) measured by Hall effect. The p-type doping is confirmed by all the electrical measurements, making the structure a junctionless transistor. In addition, other parameters regarding the contact resistance between the top metal and MoS2 are extracted thanks to a simple Transfer Length Method (TLM) structure, showing a promising contact resistivity of 1.05 x 10(-7) Omega/cm(2) and a sheet resistance of 2.36 x 10(2) Omega/sq. (C) 2016 Author(s).
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