Conference Publication Details
Mandatory Fields
Juska, G;Dimastrodonato, V;Mereni, LO;Pelucchi, E
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS
Nitrogen Incorporation Effects On Site-Controlled Quantum Dots
2011
January
Validated
1
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INVERTED TETRAHEDRAL PYRAMIDS ENERGY
We report here on the optical properties of site-controlled diluted nitride In0.25Ga0.75As1-xNx quantum dots grown by metalorganic vapour phase epitaxy (MOVPE). We show photoluminescence energy shift as a function of nitrogen precursor U-dimethylhydrazine, with a maximum value of 35 meV achieved. Optical features, substantially different from the counterpart nitrogen-free dots, are presented: an antibinding biexciton, a large distribution of lifetimes, significantly reduced fine structure splitting.
10.1063/1.3666426
Grant Details