We report here on the optical properties of site-controlled diluted nitride In0.25Ga0.75As1-xNx quantum dots grown by metalorganic vapour phase epitaxy (MOVPE). We show photoluminescence energy shift as a function of nitrogen precursor U-dimethylhydrazine, with a maximum value of 35 meV achieved. Optical features, substantially different from the counterpart nitrogen-free dots, are presented: an antibinding biexciton, a large distribution of lifetimes, significantly reduced fine structure splitting.