Yu, R;Ferain, I;Akhavan, ND;Razavi, P;Duffy, R;Colinge, JP

2011

July

Applied Physics Letters

Characterization of a junctionless diode

Validated

()

99

A diode has been realised using a silicon junctionless (JL) transistor. The device contains neither PN junction nor Schottky junction. The device is measured at different temperatures. The characteristics of the JL diode are essentially identical to those of a regular PN junction diode. The JL diode has an on/off current ratio of 10(8), an ideality factor of 1.09, and a reverse leakage current of 1 x 10(-14) A at room temperature. The mechanism of the leakage current is discussed using the activation energy (E-A). The turn-on voltage of the device can be tuned by JL transistor threshold voltage. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3608150]

MELVILLE

0003-6951

10.1063/1.3608150